The interaction in the Bi2Te3-Tb2Te3 system was investigated using differential thermal, X-ray phase, microstructure analysis and microhardness measurement methods, and the phase diagram of the system was constructed.
It was found that the Bi2Te3-Tb2Te3 system is quasibinary. As a result of the peritectic reaction in the system, the BiTbTe3 compound is formed. The electrophysical properties of the BiTbTe3 compound have been studied. It has become clear that this compound is an "n"-type semiconductor, with a band gap of ~0.21 eV. It has been established that in the Bi2Te3-Tb2Te3 system, a ternary compound containing BiTbTe3 is formed. The BiTbTe3 compound crystallizes in the orthorhombic syngony of the stibnite type: a=12.25, b=12.66, c=4.76 Å.
