The processes of ablation of the surface of single-crystal silicon wafers and the properties of materials obtained because of silicon ablation under irradiation with a scanning beam with a wavelength of λ = 1062 nm were studied with varying laser radiation power and scanning modes. The range of beam scanning modes in which SiO_2 layer growth is observed has been established. Starting from a scanning speed of 2000 mm/s, the formation of silicon oxide stops, and because of the destruction of silicon, nanometer-sized silicon particles are formed. In this case, the destruction of silicon is accompanied by sounds of different frequencies, depending on the scanning speed.th